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| Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1789 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg Vdis TOR PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature Dielectric strength Mounting torque Terminals to case,AC 1 minute (Recommended torque:0.3N*m) TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 200 200 7 4 6 0.3 0.5 25 150 -55~150 2 0.5 ae kV N*m ae UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ae /W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1789 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Turn-on time Storage time Fall time IC=1A;IB1=IB2=2mA, RL=25| VBB2=4V CONDITIONS IC=1A; IB=2mA IC=1A; IB=2mA VCB=200V VCE=200V VEB=7V IC=1A ; VCE=3V IC=0.4A ; VCE=10V 1500 20 2.0 12 5.0 |I |I MIN TYP. MAX 1.5 2.0 0.1 0.1 5 30000 MHz |I s s s UNIT V V mA mA mA SYMBOL VCEsat VBEsat ICBO ICEO IEBO hFE fT ton ts tf JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1789 Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) JMnic |
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